(2020)
K. J. Gan,
P. T. Liu*,
D. B. Ruan, C. C. Hsu, Y. C. Chiu, and S. M. Sze, “Effect of tungsten doping on the variability of InZnO conductive-bridging random access memory”,
accepted for publication in Nanotechnology,
2020.
K. J. Gan,
P. T. Liu*,
D. B. Ruan, Y. C. Chiu, and S. M. Sze, “Annealing effects on resistive switching of IGZO-based CBRAM devices”,
Vacuum,
vol. 180, p. 109630, 2020.
G. T. Zheng,
P. T. Liu*,
D. B. Ruan, Y. C. Chiu, and S. M. Sze, C. H. Du, T. Y. Wang, “High reliability gate driver on array using noise sharing of pre-charging node for TFT-LCD application”,
Journal of Society Information Display,
p. 1-14, 10 June, 2020.
K. J. Gan,
P. T. Liu*,
D. B. Ruan, C. C. Hsu, Y. C. Chiu, and S. M. Sze, “Effect of annealing treatment on performance of Ga2O3 conductive-bridging random-access memory”,
Journal of Electronic Materials,
49(11), 6817-6822, 2020.
D. B. Ruan,
P. T. Liu*,
K. J. Gan, Y. C. Chiu, C. C. Hsu, and S. M. Sze, “Role of tungsten dopants in indium oxide thin-film transistor on radiation hardness technology”,
Appl. Phys. Lett.,
vol. 116, p. 182104, 2020.
(AIP Featured Article).
M. C. Yu, D. B. Ruan, P. T. Liu*, T. C. Chien, Y. C. Chiu, K. J. Gan, and S. M. Sze, “High Performance Transparent a-IGZO Thin Film Transistors With ALD-HfO2 Gate Insulator on Colorless Polyimide Substrate”, IEEE Transactions on Nanotechnology, vol. 19, pp. 481-485, 2020.