(2018)
D. B. Ruan,
P. T. Liu*,
K. J. Gan, Y. C. Chiu, M. C. Yu, T. C. Chien, Y. H. Chen, P. Y. Kuo, S. M. Sze, “The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure”,
Thin Solid Films,
vol. 666, p. 94-99, 2018.
K. J. Gan,
P. T. Liu*,
Y. C. Chiu, D. B. Ruan, T. C. Chien, S. M. Sze, “TAOS based Cu/TiW/IGZO/Ga2O3/Pt bilayer CBRAM for low-power display technology”,
Surface & Coatings Technology,
vol. 354, p. 169-174, 2018.
D. B. Ruan,
P. T. Liu*,
Y. C. Chiu, M. C. Yu, K. J. Gan, T. C. Chien, Y. H. Chen, P. Y. Kuo, S. M. Sze,” Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric”,
Thin Solid Films,
vol. 665, p. 117-122, 2018.
D. B. Ruan,
P. T. Liu*,
Y. C. Chiu, P. Y. Kuo, M. C. Yu, K. Z. Kan, T. C. Chien, Y. H. Chen, S. M. Sze, “Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack”,
Thin Solid Films,
vol. 660, p. 578-584, 2018.
D. B. Ruan,
P. T. Liu*,
Y. C. Chiu, K. Z. Kan, M. C. Yu, T. C. Chien, Y. H. Chen, P. Y. Kuo, S. M. Sze, “Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition”,
Thin Solid Films,
vol. 660, p. 885-890, 2018.
D. Lin, S. B. Pi, J. W. Yang, N. Tiwari, J. H. Ren, Q. Zhang,
P. T. Liu,
H. P. Shieh, “Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO:N channel layer”,
Semiconductor Science and Technology,
vol. 33 (6), p. 065001, 2018.
P. T. Liu*,
D. B. Ruan, X. Y. Yeh, Y. C. Chiu, G. T. Zheng, and S. M. Sze, “Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture”,
Scientific Reports,
vol. 8, p. 8153, 2018.
C. C. Chang,
P. T. Liu*,
C. Y. Chien, Y. S. Fan, “Solving the integration problem of one transistor one memristor architecture with a Bilayer IGZO film through synchronous process”,
Appl. Phys. Lett.,
vol. 112 (17), p. 172101, 2018.
R. F. Fu, J. W. Yang, W. C. Chang, W. C. Chang, C. M. Chang, D. Lin, Q. Zhang,
P. T. Liu,
H. P. D. Shieh, “The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors”,
Physica Status Solidia –Applications and Materials Science,
vol. 215 (6), p. 1700785, 2018.
R. N. Chauhan, N. Tiwari, H. P. D. Shieh,
P. T. Liu,
“Electrical performance and stability of tungsten indium zinc oxide thin-film transistors”,
Materials Letters,
vol. 214, pp. 293-296, 2018.
P. T. Liu*,
C. H. Chang, P. Y. Kuo, P. W Chen, “Effects of Backchannel Passivation on Electrical Behavior of Hetero-Stacked a-IWO/IGZO Thin Film Transistors”,
ECS Journal of Solid State Science and Technology,
vol. 7(3), pp. Q17-Q20, 2018.
D. B. Ruan,
P. T. Liu*,
Y. C. Chiu, P. Y. Kuo, M. C. Yu, K. J. Gan, T. C. Chien, S. M. Sze, “Mobility enhancement for high stability tungsten-doped indium-zinc oxide thin film transistors with a channel passivation layer “,
RSC ADVANCES,
vol. 8(13), pp. 6925-6930, 2018.